 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MAC12SM, MAC12SN Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. * Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits * Blocking Voltage to 800 Volts * On-State Current Rating of 12 Amperes RMS at 70C * High Surge Current Capability - 90 Amperes * Rugged, Economical TO220AB Package * Glass Passivated Junctions for Reliability and Uniformity * Maximum Values of IGT, VGT and IH Specified for Ease of Design * High Commutating di/dt - 8.0 A/ms Minimum at 110C * Immunity to dV/dt - 15 V/msec Minimum at 110C * Operational in Three Quadrants: Q1, Q2, and Q3 * Device Marking: Logo, Device Type, e.g., MAC12SM, Date Code http://onsemi.com TRIACS 12 AMPERES RMS 600 thru 800 VOLTS MT2 G MT1 MARKING DIAGRAM 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12SM MAC12SN On-State RMS Current (All Conduction Angles; TC = 70C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 110C) Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width = 1.0 msec, TC = 70C) Average Gate Power (t = 8.3 msec, TC = 70C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 12 90 A A Value Unit V 1 2 MAC12xx ALYWW 3 TO-220AB CASE 221A Style 4 xx A L Y WW = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week I2t PGM PG(AV) TJ Tstg 33 16 0.35 - 40 to 110 - 40 to 150 A2sec W W C C PIN ASSIGNMENT 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION Device MAC12SM MAC12SN Package TO220AB TO220AB Shipping 50 Units/Rail 50 Units/Rail 1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2003 1 April, 2003 - Rev. 2 Publication Order Number: MAC12SM/D MAC12SM, MAC12SN THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction to Case Junction to Ambient Symbol RqJC RqJA TL Value 2.2 62.5 260 Unit C/W C Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage(1) (ITM = 17 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) Latching Current (VD = 12 V, IG = 5 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) DYNAMIC CHARACTERISTICS Critical Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110C, f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W) Critical Rate of Rise of Off-State Voltage (VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110C) Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz 2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. (di/dt)c 8.0 10 A/ms VTM IGT IH IL VGT 0.45 0.45 0.45 0.68 0.62 0.67 1.5 1.5 1.5 3.0 5.0 3.0 15 20 15 V 1.5 2.5 2.7 2.5 5.0 5.0 5.0 10 mA mA 1.85 V mA TJ = 25C TJ = 110C IDRM, IRRM mA 0.01 2.0 Symbol Min Typ Max Unit dV/dt 15 40 - V/ms di/dt - - 10 A/ms http://onsemi.com 2 MAC12SM, MAC12SN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT (-) MT2 (-) MT2 + IGT Quadrant III (-) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC12SM, MAC12SN IGT, GATE TRIGGER CURRENT (mA) 100 VGT, GATE TRIGGER VOLTAGE (VOLTS) 0.90 0.85 0.80 Q3 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 - 40 - 25 - 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) Q2 Q1 10 Q3 Q2 Q1 1 0.1 - 40 - 25 - 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 95 110 Figure 1. Typical Gate Trigger Current versus Junction Temperature 100 IL , LATCHING CURRENT (mA) 100 IH, HOLDING CURRENT (mA) Figure 2. Typical Gate Trigger Voltage versus Junction Temperature 10 Q1 Q2 Q3 10 MT2 Positive 1 MT2 Negative 1 0.1 - 40 - 25 - 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 0.1 - 40 - 25 - 10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (C) 95 110 Figure 3. Typical Latching Current versus Junction Temperature P(AV), AVERAGE POWER DISSIPATION (WATTS) 110 TC , CASE TEMPERATURE (C) 25 Figure 4. Typical Holding Current versus Junction Temperature 100 30, 60 90 90 80 180 70 DC 60 0 4 6 8 10 IT(RMS), RMS ON-STATE CURRENT (AMPS) 2 12 20 90 60 10 DC 180 120 15 30 5 0 0 2 6 8 4 10 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 12 Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation http://onsemi.com 4 MAC12SM, MAC12SN IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) Typical @ TJ = 25C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 100 1 Maximum @ TJ = 110C Maximum @ TJ = 25C 10 0.1 1 0.01 0.1 1 10 100 t, TIME (ms) 1000 10000 Figure 8. Typical Thermal Response 0.1 0.5 1.5 2.5 3.5 4.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 7. Typical On-State Characteristics http://onsemi.com 5 MAC12SM, MAC12SN PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 -TB 4 SEATING PLANE F T S C Q 123 A U K H Z L V G D N R J STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 6 MAC12SM/D |
Price & Availability of MAC12SN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |